XP231P02013R-G - Torex Semiconductor

XP231P02013R-G N-channel MOSFET

XP231P02013R-G P-channel MOSFET -30V, -0.2A ■FEATURES On-State Resistance Driving voltage : RDS(on)＝5Ω@VGS =-4.5V : -2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free ■APPLICATIONS ●Switching ETR11051-001 ■EQUIVALENT CIRCUIT 3 ■ PIN CONFIGURATION ●SOT-323-3A Drain 3 1 2 1 2 Gate Source ■ PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNI.

Features

On-State Resistance Driving voltage : RDS(on)＝5Ω@VGS =-4.5V : -2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free
■APPLICATIONS
●Switching ETR11051-001
■EQUIVALENT CIRCUIT 3
■ PIN CONFIGURATION
●SOT-323-3A Drain 3 1 2 1 2 Gate Source
■ PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP231P02013R-G
* SOT-323-3A 3,000 pcs/ Reel
* The “-G” suffix denotes Halogen and Antimony free as well as beingfully EU RoHS compliant
■ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) (
*1) .