XP1212 - Panasonic Semiconductor

XP1212 Silicon NPN epitaxial planer transistor

Composite Transistors XP1212 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/digital circuits 0.65 s Features q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1.

Features

q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0.65 4 0.9± 0.1 q UN1212 × 2 elements 0.7±0.1 s Basic Part Number of Element 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150
  –55 to +150 Unit V V mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitt.