XP1009 - Mimix Broadband

XP1009 GaAs MMIC Power Amplifier

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 330,660 mA +0.3 VDC +12 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel tempera.

Features

Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and .