XBS303V17 Schottky Barrier Diode, 3A, 30V Type FEATURES Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.355V (TYP.) : IF(AV)=3A : VRM=30V ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 30 V Reverse Voltage (DC) VR 30 V Forward Current (Average) IF(AV) 3A Non Continuous Fo.
Forward Voltage Forward Current Repetitive Peak Reverse Voltage
: VF=0.355V (TYP.) : IF(AV)=3A : VRM=30V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30 V
Reverse Voltage (DC)
VR 30 V
Forward Current (Average)
IF(AV)
3A
Non Continuous Forward Surge Current
*1
IFSM
60 A
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 +150
*1 Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature, high current and high voltage, it may have t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XBS303V17R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
2 | XBS303V19R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
3 | XBS303V29R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
4 | XBS304F11R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
5 | XBS304S17 |
Torex Semiconductor |
Schottky Barrier Diode | |
6 | XBS304S17R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
7 | XBS304S19R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
8 | XBS306P11R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
9 | XBS306S17 |
Torex Semiconductor |
Schottky Barrier Diode | |
10 | XBS306S17R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
11 | XBS306S19R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
12 | XBS013P11R-G |
Torex |
Schottky Barrier Diode |