SOD-123A SOD-123A (Halogen & Antimony free) ■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2:trr measurement circuit VF1 IF=100mA VF2 IF=1A IR VR=40V Ct VR=10V ,,f=1MHz trr IF=IR=10mA , irr=1mA , RL=100Ω Bias DeviceUnder Test MIN. - LIMITS TYP. 0.34 0.4.
Forward Voltage Forward Current Repetitive Peak Reverse Voltage
: VF=0.49V (TYP.) : IF(AV)=1A : VRM=40V
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■ABSOLUTE MAXIMUM RATINGS
■PACKAGING INFORMATION
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage
VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AV) 1 A
Non Continuous Forward Surge Current
*1
IFSM
10
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55~+150
*1:Non continuous high amplitude 60Hz half-sine wave.
A
℃ ℃
■MARKING RULE
Cathode Ba.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XBS104S14 |
msksemi |
Schottky Barrier Diode | |
2 | XBS104S14 |
Torex Semiconductor |
Schottky Barrier Diode | |
3 | XBS104S13 |
Torex Semiconductor |
Schottky Barrier Diode | |
4 | XBS104S13R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
5 | XBS104P11R-G |
Torex |
Schottky Barrier Diode | |
6 | XBS104V14R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
7 | XBS013P11R-G |
Torex |
Schottky Barrier Diode | |
8 | XBS013R1DR-G |
Torex Semiconductor |
Schottky Barrier Diode | |
9 | XBS013S15 |
Torex Semiconductor |
Schottky Barrie Diodes | |
10 | XBS013S15R-G |
Torex Semiconductor |
Schottky Barrier Diode | |
11 | XBS013S16 |
Torex Semiconductor |
Schottky Barrie Diodes | |
12 | XBS013S16R-G |
Torex Semiconductor |
Schottky Barrier Diode |