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WTC6401 - Weitron Technology

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WTC6401 Enhancement Mode Power MOSFET

WTC6401 P-Channel Enhancement Mode Power MOSFET 1 3 DRAIN DRAIN CURRENT -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) www.DataSheet4U.com R DS(ON) <50mΩ@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package Features: GATE SOURCE 2 3 1 2 SOT-23 Applications *Power Manag.

Features

GATE SOURCE 2 3 1 2 SOT-23 Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current 1 Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -12 ±8 -4.3 -3.4 -12 1.38 90 - 55~+150 Unit V A Total Power Dissipation(T A =25˚C) Maximum Thermal Resistace Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC6401=6401 http:www.weitron.com.tw .

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