WSP4886 - VBsemi

WSP4886 Dual N-Channel MOSFET

WSP4886-VB www.VBsemi.com WSP4886-VB Datasheet Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.016 at VGS = 10 V 30 0.020 at VGS = 4.5 V ID (A)a 8.5 7.6 Qg (Typ.) 7.1 FEATURES • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Curre.

Features

• TrenchFETPower MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Notebook System Power
• Low Current DC/DC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Di.