www.vishay.com WSBE Series Vishay Dale Power Metal Strip® Shunt Resistor, Low TCR (Down to < ± 10 ppm/°C), Very Low Value (Down to 15 μΩ) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Infographics Reference Designs FEATURES • High power capability that enables current sensing to 1825 A • Proprietary processing technique produces extremely low resistan.
• High power capability that enables current sensing to 1825 A
• Proprietary processing technique produces extremely low resistance values
• All welded construction
• Solid metal nickel-chrome alloy resistive
element with unique design for low TCR (down to ± 10 ppm/°C)
• Very low inductance (< 5 nH)
• Low thermal EMF (as low as < 1.25 μV/°C)
• AEC-Q200 qualified
• PATENT(S): www.vishay.com/patents
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
STANDARD ELECTRICAL SPECIFICATIONS
GLOBAL MODEL
SIZE
POWER RATING
P70 °C W
TOLERANCE ±%
RESISTANCE V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WSBE8536 |
Vishay |
Power Metal Strip Shunt Resistor | |
2 | WSB06200AT |
Weitron |
High Voltage Power Schottky Rectifier | |
3 | WSB10100T |
WillSEMI |
Schottky Barrier Diode | |
4 | WSB1151 |
Wooseok |
PNP EPITAXIAL SILICON TRANSISTOR | |
5 | WSB20100T |
WillSEMI |
Schottky Barrier Diode | |
6 | WSB20100TF |
WillSEMI |
Schottky Barrier Diode | |
7 | WSB20L100T |
WillSEMI |
Schottky Barrier Diode | |
8 | WSB20L100TF |
WillSEMI |
Schottky Barrier Diode | |
9 | WSB5503W |
Will Semiconductor |
Middle Power Schottky Barrier Diode | |
10 | WSB5507W |
WillSEMI |
Schottky Barrier Diode | |
11 | WSB5508L |
WillSEMI |
Schottky Barrier Diode | |
12 | WSB5510M |
WillSEMI |
Schottky Barrier Diode |