WMS30N050S - WeEn

WMS30N050S N-Channel Silicon MOSFET

WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. RoHS 2. Features and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize C.

Features

• Advance High Cell Density Trench Technology
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Switching Losses
• Optimized Gate Charge to Minimize Driver Losses
• 100% UIS Tested
• RoHS Compliant and Halogen Free halogen-Free 3. Applications
• DC−DC Converters
• BLDC Motor Control
• Load Switch
• Lithium-ion Battery Protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Par.