WM02N08F - WAYON

WM02N08F N-Channel Enhancement MOSFET

Features  Way-on Small Signal MOSFETs  VDS= 20V, ID = 0.75A RDS(on) < 0.38Ω @ VGS = 4.5V RDS(on) < 0.45Ω @ VGS = 2.5V  Trench LV MOSFET Technology  ESD Protected Mechanical Characteristics  DFN1006-3L Package  Marking : Making Code  RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM02N08F N-Channel Enhancement MOSFET G D S DFN1006-3L.

Features

 Way-on Small Signal MOSFETs
 VDS= 20V, ID = 0.75A RDS(on) < 0.38Ω @ VGS = 4.5V RDS(on) < 0.45Ω @ VGS = 2.5V
 Trench LV MOSFET Technology
 ESD Protected Mechanical Characteristics
 DFN1006-3L Package
 Marking : Making Code
 RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM02N08F N-Channel Enhancement MOSFET G D S DFN1006-3L G D S DFN1006-3L(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current TA=25°C ID 0.75 Pulsed Drain Current1 IDM 3.