These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well s.
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power suppl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WFW18N50N |
Winsemi |
Silicon N-Channel MOSFET | |
2 | WFW18N50W |
Winsemi |
Silicon N-Channel MOSFET | |
3 | WFW10N80 |
Wisdom technologies |
N-Channel MOSFET | |
4 | WFW11N90 |
Wisdom technologies |
N-Channel MOSFET | |
5 | WFW13N50 |
Winsemi |
Silicon N-Channel MOSFET | |
6 | WFW20N50 |
Wisdom |
N-Channel MOSFET | |
7 | WFW20N60 |
Wisdom technologies |
N-Channel MOSFET | |
8 | WFW20N60W |
Winsemi |
Silicon N-Channel MOSFET | |
9 | WFW24N50W |
Winsemi |
Silicon N-Channel MOSFET | |
10 | WFW24N60 |
Wisdom technologies |
N-Channel MOSFET | |
11 | WFW28N60 |
Wisdom technologies |
N-Channel MOSFET | |
12 | WFW9N70 |
Wisdom technologies |
N-Channel MOSFET |