WFF18N50L - Winsemi

WFF18N50L Silicon N-Channel MOSFET

Silicon N-Channel MOSFET Features  18A,500V,RDS(on)(Max0.31Ω)@VGS=10V  Ultra-low Gate charge(Typical 37.9nC)  Fast Switching Capability  100%Avalanche Tested  Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially desig.

Features

 18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
 Ultra-low Gate charge(Typical 37.9nC)
 Fast Switching Capability
 100%Avalanche Tested
 Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor corre.