W21NM60N - STMicroelectronics

W21NM60N STW21NM60N

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications .

Features

Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω ID 3 3 1 2 3 1 2 1 17A 17A 17A(1) 17A 17A TO-220 D2PAK TO-220FP 1. Limited by wire bonding
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■ 3 12 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I2PAK TO-247 Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance.