This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITC.
B150NF55 P150NF55 W150NF55 PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(
*
*) Drain Current (continuous) at TC = 100°C ID IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (
•) Pulse width limited by safe operating area.
(
*
*) Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W150 |
Cypress Semiconductor |
440BX AGPset Spread Spectrum Frequency Synthesizer | |
2 | W1505 |
TT electronics |
Precision Thin Film Chip Resistors | |
3 | W15 |
ETC |
15 Watt - Single Output Regulated Power Supplies | |
4 | W152 |
Cypress Semiconductor |
Spread Aware/ Eight Output Zero Delay Buffer | |
5 | W1520NC500 |
IXYS |
Rectifier Diode | |
6 | W1520NC520 |
IXYS |
Rectifier Diode | |
7 | W1520NC540 |
IXYS |
Rectifier Diode | |
8 | W1520NC560 |
IXYS |
Rectifier Diode | |
9 | W1520NC580 |
IXYS |
Rectifier Diode | |
10 | W1520NC600 |
IXYS |
Rectifier Diode | |
11 | W1520NT500 |
IXYS |
Rectifier Diode | |
12 | W1520NT520 |
IXYS |
Rectifier Diode |