VTP8651 - PerkinElmer Optoelectronics

VTP8651 VTP Process Photodiodes

Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C E.

Features

Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 725 925 140 ±50 2.0 x 10 -13 (Typ.) 1.4 x 10 12 (Typ.) .045 .50 1150 .15 50 35 Typ. 55 .24 300 -2.0 30 Max. µA %/°C mV mV/°C nA GΩ pF A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 64 .