VT760-E3 - Vishay

VT760-E3 Trench MOS Barrier Schottky Rectifier

VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AC TMBS ® ITO-220AC VT760 PIN 1 PIN 2 2 1 CASE TO-263AB K VFT760 PIN 1 PIN 2 TO-262AA K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hi.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VBT760 NC K A HEATSINK VIT760.