VS40200AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in MOTO applications and a w.
♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS40200AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in MOTO applications and a wide variety of other applications. Absolute Maximum RatingsStresses beyond those listed under “Absolu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS40200AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VS40200AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VS40200ATD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VS40200BT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VS4020AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VS4020AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VS40230AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VS40280AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VS40120AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VS40300AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VS4030AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VS4080AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |