VS3640DB - Vanguard Semiconductor

VS3640DB N-Channel Advanced Power MOSFET

Features  Dual N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel inf.

Features

 Dual N-Channel
 High Current Capability
 Low on-resistance RDS(on) @ VGS=4.5 V
 Low Gate Charge
 Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V ① IDM Pul.