VS3622DP2 - Vanguard Semiconductor

VS3622DP2 Dual N-Channel Advanced Power MOSFET

Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3622DP2 30V/42A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 7.5 mΩ 11 mΩ 42 A PDFN5x6 Part.

Features

 Dual N-Channel，5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching and High efficiency
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant
 VS3622DP2 30V/42A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 7.5 mΩ 11 mΩ 42 A PDFN5x6 Part ID VS3622DP2 Package Type PDFN5x6 Marking 3622DP2 Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Body-Diod.