VS3606ATD - Vanguard Semiconductor

VS3606ATD N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3606ATD 30V/140A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 3 mΩ R @DS(on),TYP VGS=4.5V 4 mΩ I D 140 A TO-263 Part ID VS3606ATD Package Type TO-263 Marki.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS3606ATD 30V/140A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 3 mΩ R @DS(on),TYP VGS=4.5V 4 mΩ I D 140 A TO-263 Part ID VS3606ATD Package Type TO-263 Marking 3606ATD Tape and reel information 1000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM.