This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYM.
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM
TJ max. Diode variation
EAS
D2PAK, TO-262 2x5A 150 V 0.93 V
7 mA at 125 °C 175 °C
Common cathode 5 m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS-10CTQ150S-M3 |
Vishay |
High Performance Schottky Rectifier | |
2 | VS-10CTQ150-1-M3 |
Vishay |
High Performance Schottky Rectifier | |
3 | VS-10CTQ150-1PbF |
Vishay |
High Performance Schottky Rectifier | |
4 | VS-10CTQ150-M3 |
Vishay |
High Performance Schottky Rectifier | |
5 | VS-10CTQ150-N3 |
Vishay |
Schottky Rectifier | |
6 | VS-10CTQ150PbF |
Vishay |
Schottky Rectifier | |
7 | VS-10CDH06-M3 |
Vishay |
Hyperfast Rectifier | |
8 | VS-10CDH06HM3 |
Vishay |
Hyperfast Rectifier | |
9 | VS-10CSH01-M3 |
Vishay |
Hyperfast Rectifier | |
10 | VS-10CSH01HM3 |
Vishay |
Hyperfast Rectifier | |
11 | VS-10CSH02-M3 |
Vishay |
Hyperfast Rectifier | |
12 | VS-10CSH02HM3 |
Vishay |
Hyperfast Rectifier |