VP13A - Supertex

VP13A P-Channel Enhancement-Mode Vertical DMOS FETs

(J) §upertexinc. VP13A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -40V -60V -100V ROSION} (max) 250 250 250 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High in.

Features

o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices ID(ON} (min) -O.25A -O.25A -O.25A Order Number I Package TO
·39 TO
·92 VP1304N2 VP1304N3 VP1306N2 VP1306N3 VP1310N2 VP1310N3 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces d.