VNS1NV04DP-E - STMicroelectronics

VNS1NV04DP-E fully autoprotected Power MOSFET

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects .

Features

Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power mosfet (analog driving)
• Compatible with standard power mosfet
• In compliance with the 2002/95/EC european directive SO-8 Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard .