The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 1 DPAK TO-252 3 2 1 .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNK10N07FM |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNK14N04FM |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VNK5N07FM |
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | |
4 | VNK7N04FM |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
5 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
6 | VN0104N2 |
Supertex |
Understanding MOSFET | |
7 | VN0104N3 |
Supertex |
Understanding MOSFET | |
8 | VN0104N5 |
Supertex |
Understanding MOSFET | |
9 | VN0104N6 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
10 | VN0104N7 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
11 | VN0104N9 |
Supertex |
Understanding MOSFET | |
12 | VN0104NO |
Supertex |
Understanding MOSFET |