o §upertexinc. VN13A N-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVDSS I BVOGS 40V 60V 100V RDS(ON) (max) an an an IO(ON) (min) O.5A O.5A O.5A Order Number I Package TO-39 TO-92 VN1304N2 VN1306N2 VN1304N3 VN1306N3 VN1310N2 VN1310N3 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of p.
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coeffic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN1316N2 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
2 | VN1316N3 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
3 | VN1320N2 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
4 | VN1320N3 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
5 | VN13C |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
6 | VN100D |
Siliconix |
(VN1xxD) MOSPOWER | |
7 | VN100x |
Siliconix |
(VN1xxD) MOSPOWER | |
8 | VN1015 |
Cherry |
MAGNETIC SENSOR | |
9 | VN10K |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
10 | VN10K |
Microchip |
N-Channel Vertical DMOS FET | |
11 | VN10K |
TT |
N-Channel MOSFET | |
12 | VN10K-TO18 |
Seme LAB |
N-Channel MOSFET |