VN0808L - Siliconix

VN0808L N-Channel Enhancement-Mode MOS Transistors

flr]l""Siliconix ~ incorporated VN0808 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.(1 ) (A) PACKAGE VNOSOSL SO 4 0.30 TO-92 VNOSOSM SO 4 0.33 TO-237 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ09 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN .

Features

eter has been revised from previous datasheet VN0808L 156 VN0808M 125 UNITS °C/W 6-73 VN0808 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VGs =OV,I D =10.l1A VDS = VGS, ID = 1 mA Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~:~~nductance3 Common Source Output Conductance3 DYNAMIC IGSS IDSS ID(ON) rDS(ON) gFs gos VDS = 0 V, VGS = ±15 V VDS = 80 V VGS = 0 V I T = 125°C VDS = 10 V, VGS = 10 V VGS = 5 V, I D = 0.3 A VGs .