VN0109 - Supertex Inc

VN0109 N-Channel Vertical DMOS FET

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS s.

Features

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► Free from secondary breakdown
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► Low power drive requirement
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► Ease of paralleling
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► Low CISS and fast switching speeds
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► Excellent thermal stability
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► Integral source-drain diode
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► High input impedance and high gain Applications
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► Motor controls
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► Converters
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► Amplifiers
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► Switches
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► Power supply circuits
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► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination .