VB5610N - VBsemi

VB5610N Dual-Channel MOSFET

VB5610N N- and P-Channel 60V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY N-Channel P-Channel VDS (V) 60 - 60 RDS(on) (Ω) 0.08 at VGS = 10 V 0.10 at VGS = 4.5 V 0.08 at VGS = - 10 V 0.10 at VGS = - 4.5 V ID (A) 4.0 3.6 - 4.0 - 3.6 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 4.0 - 4.0 3.2 - 3.2 Pulsed Drain Current IDM 15 10 Continuous Source Curre.