V7N3M153 - Vishay

V7N3M153 Trench MOS Barrier Schottky Rectifier

www.vishay.com V7N3M153 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier K 1 2 3 4 Anode (1) Anode (2) Anode (3) Anode (4) 4 3 2 1 DFN33A Cathode (K) LINKS TO ADDITIONAL RESOURCES FEATURES • Low profile package - typical height of 0.88 mm Available • Leadless DFN package with side-wettable flanks suitable for cu.

Features

• Low profile package - typical height of 0.88 mm Available
• Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection)
• Very low voltage drop by TMBS Gen3 technology
• Low power losses, high efficiency
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 EDA / CAD Related Documents Packages Marking Application Notes PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3..