V60M120C-M3 - Vishay

V60M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS ® TO-220AB V60M120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C ma.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 120 V 300 A 0.69 V 175 °C TO-220AB Diode variations Dual common cathode .