www.vishay.com V40M150C-M3, V40M150CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB V40M150C 3 2 1 PIN 1 K PIN 2 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 1.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A (TA = 125 °C) TJ max. Package
2 x 20 A 150 V 160 A 0.75 V 175 °C
TO-220AB
Diode variations
Dual common cathode
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V40M150CHM3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V40M120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V400DK1-KS1 |
INNOLUX |
TFT LCD Module | |
4 | V400H1-L01 |
Chi Mei |
TFT LCD | |
5 | V400H1-L02 |
CMI MEI |
TFT LCD | |
6 | V400H1-L04 |
CMI MEI |
TFT LCD | |
7 | V400H1-L05 |
CMI MEI |
TFT LCD | |
8 | V400H1-L07 |
CMI MEI |
TFT LCD | |
9 | V400H1-L08 |
CMI MEI |
TFT LCD | |
10 | V400H1-L10 |
CMI MEI |
TFT LCD | |
11 | V400H1-L11 |
CMI MEI |
TFT LCD | |
12 | V400H1-L12 |
CMI MEI |
TFT LCD |