www.vishay.com V40DM120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V40DM120C Anode 1 K Anode 2 Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • I.
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing dio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V40DM120C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V40DM120CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V40DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | V40DM150C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V40DM45C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V40DM60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | V40D100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V40D100C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V40D100CHM3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V40D120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V40D120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V40D120CHM3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |