UTT40N08 - Unisonic Technologies

UTT40N08 N-CHANNEL POWER MOSFET

The UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness  FEATURES * RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING I.

Features

* RDS(ON) < 45mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT40N08L-TN3-R UTT40N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel
 MARKING INFORMATION PACKAGE TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 3 QW-R502-A81.a UTT40N08 Preliminary Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TJ=25°C, un.