UTG4N65-S - UTC

UTG4N65-S 650V TRENCH GATE FIELD-STOP IGBT

The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG4N65-S is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low sa.

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V (TC =25°C)
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG4N65L-TN3-R UTG4N65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G C E Packing Tape Reel
 MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-107.a UTG4N65-S Preliminary Insulated Gate Bipolar Transistor
 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltag.