The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SY.
* RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
Power MOSFET
1.Gate
2.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3P01ZL-AE2-R
UT3P01ZG-AE2-R
UT3P01ZL-AL3-R
UT3P01ZG-AL3-R
UT3P01ZL-AN3-R
UT3P01ZG-AN3-R
UT3P01ZL-AQ3-R
UT3P01ZG-AQ3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3 SOT-323 SOT-523 SOT-723
Pin Assignment
1
2
3
G
S
D
G
S
D
G
S
D
G
S
D
Packing
Tape Reel Tape Reel Tape Reel Tape Reel
MARKING
w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UT3P06 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
2 | UT3PP |
Unisonic Technologies |
DUAL TRANSISTOR | |
3 | UT3PP06 |
UTC |
Dual P-CHANNEL POWER MOSFET | |
4 | UT3005 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS | |
5 | UT3005 |
Microsemi |
Standard Recovery Rectifiers | |
6 | UT3006 |
Unisonic Technologies |
N-Channel Power MOSFET | |
7 | UT3008-H |
UTC |
P-CHANNEL POWER MOSFET | |
8 | UT3010 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS | |
9 | UT3010 |
Microsemi |
Standard Recovery Rectifiers | |
10 | UT3020 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS | |
11 | UT3020 |
Microsemi |
Standard Recovery Rectifiers | |
12 | UT3040 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |