UT28F256LV - Aeroflex Circuit Technology

UT28F256LV Radiation-Hardened 32K x 8 PROM

The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The combinat.

Features

q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 65ns maximum address access time (-55 oC to +125 oC) q Three-state data bus q Low operating and standby current - Operating: 50.0mA maximum @15.4MHz
• Derating: 1.5mA/MHz - Standby: 1.0mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LETTH(0.25) ~ 100 MeV-cm2/mg - SEL Immune >128 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% g.