The UT1893-91-0125 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard5.0mm package. The device is sensitive to visible and near infrared radiation. 5.0 1.0 0.5 MAX. 1.5 TYP. 24.0 MIN. 8.7 5.9 12 2.54±0.1 2 Collector 1 Emitter Notes: 1. All dimensions are in mm. 2. Tolerance is ± 0.25mm unless otherwise noted. D.
O VECO Topr Tstg Soldering Temperature(1.6mm from body) Tsol 5.0mm ROUND PHOTOTRANSISTOR Rating Unit 75 mW 30 V 5V -25 to +85 -40 to +100 Dip Soldering : 260 for 5 sec. Hand Soldering : 350 for 3 sec. Electrical and Optical Characteristics: Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter saturation voltage Rise time Fall time Collector Dark Current On State Collector Current Peak Sensitivity Wavelength Symbol V(BR)CEO V(BR)ECO V(SAT)CE Tr Tf ICEO Ic(ON) λP Condition Ee=0mW/cm 2 Ic=100µA Ee=0mW/cm 2 IE=100µA Ee=1mW/cm 2 Ic=2mA VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UT180020 |
IPF |
Diffuse reflection sensor | |
2 | UT180021 |
IPF |
Diffuse reflection sensor | |
3 | UT180022 |
IPF |
Diffuse reflection sensor | |
4 | UT18002A |
IPF |
Diffuse reflection sensor | |
5 | UT18002B |
IPF |
Diffuse reflection sensor | |
6 | UT18002C |
IPF |
Diffuse reflection sensor | |
7 | UT18NP06 |
UTC |
DUAL-CHANNEL POWER MOSFET | |
8 | UT18NP10 |
UTC |
DUAL-CHANNEL POWER MOSFET | |
9 | UT10005 |
CITC |
10A High Power Ultra Fast Rectifiers | |
10 | UT10005CT |
CITC |
10A High Power Ultra Fast Rectifiers | |
11 | UT1001 |
CITC |
10A High Power Ultra Fast Rectifiers | |
12 | UT1001CT |
CITC |
10A High Power Ultra Fast Rectifiers |