UT150N03 - UTC

UT150N03 30V N-CHANNEL POWER MOSFET

The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.  FEATURES TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A * Excellent gate ch.

Features

TO-220
* RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A
* RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6
* RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A
* RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A
* Excellent gate charge
* Very low on-resistance RDS(ON)
 SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-466.a UT150N03 Preliminary Power MOSFET
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT150N03L-TA3-T UT150N03G-TA3-T TO-220 UT150N03L-P5060-R UT150N03G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assig.