UT02N06VZ - UTC

UT02N06VZ N-CHANNEL MOSFET

The UT02N06VZ employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 5.0 Ω @ VGS=2.5V, ID=0.20A *.

Features

low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
 FEATURES
* RDS(ON) ≤ 4.0 Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 5.0 Ω @ VGS=2.5V, ID=0.20A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
 SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-435.a UT02N06VZ Preliminary Power MOSFET
 ORDERING INFORMATION Order.