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The UTC UPG50N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation. FEATURES * High speed switching * High input impedance * Low saturation voltage: VCE(SAT) =2.6V @ IC=50A SYMBOL ORDERING INFORMATION.
* High speed switching
* High input impedance
* Low saturation voltage: VCE(SAT) =2.6V @ IC=50A
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UPG50N120L-T64-T
UPG50N120G-T64-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-264
Pin Assignment 123 GCE
Packing Tube
MARKING
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 3
QW-R203-055.B
UPG50N120
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±25
V
.
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