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The PG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surf.
• Supply voltage
• Switch control voltage
• Low insertion loss : VDD = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = 0.2 to +0.2 V (0 V TYP.) : LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)
• High isolation : ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)
• High-density su.
UPG2012TB - NEC
The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPG2012TK |
NEC |
NECs W SINGLE CONTROL L/ S-BAND SPDT SWITCH |
|
| 2 | UPG2015TB |
CEL |
1W SINGLE CONTROL L / S-BAND SPDT SWITCH |
|
| 3 | UPG2006TB |
NEC |
NECs 1.8 V L/ S-BAND SPDT SWITCH |
|
| 4 | UPG2009TB |
NEC |
L-BAND HIGH POWER SPDT SWITCH |
|
| 5 | UPG2009TB |
CEL |
L-BAND HIGH POWER SPDT SWITCH |
|
| 6 | UPG2022T5G |
CEL |
HIGH POWER GaAs MMIC SPDT SWITCH |
|
| 7 | UPG2022TB |
CEL |
4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH |
|
| 8 | UPG2024TQ |
California Eastern Labs |
NECs GaAs MMIC DPDT SWITCHES |
|
| 9 | UPG2027TQ |
NEC |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC |
|
| 10 | UPG2030TB |
NEC |
NECs 1W L/ S-BAND SPDT SWITCH |
|
| 11 | UPG2030TK |
NEC |
NECs 1 W ULTRA SMALL SPDT SWITCH |
|
| 12 | UPG2031TQ |
CEL |
L-BAND SP3T SWITCH |
|