UPD4481322 - NEC

UPD4481322 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM

The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are optimized to eliminat.

Features

• Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y) VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y)
• Synchronous operation
• Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60, -A75, -C60, -C75) TA = −40 to +85 °C (-A44Y, -A50Y, -A60Y, -A75Y, -C60Y, -C75Y)
• 100 percent bus utilization
• Internally self-timed write control
• Burst read / write : Interleaved burst and linear burst sequence
• Fully registered inputs and outputs for pipelined operation
• All registers triggered off positive clock edge
• 3.3V or 2.5V LVTTL Compatible : All in.