The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II). Features • 262,144 words by 16 bits organization • Fast access time : 8, 10, 12 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I.
• 262,144 words by 16 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 220 200 190 220 200 190 At standby 10
µPD444016LE-8 µPD444016LE-10 µPD444016LE-12 µPD444016G5-8-7JF µPD444016G5-10-7JF µPD444016G5-12-7JF
44-pin plastic SOJ (10.16 mm (400))
8 10 12
44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent)
8 10 12
The information in this document .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD444012A-X |
NEC |
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | |
2 | UPD444016-Y |
NEC |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | |
3 | UPD444016L |
NEC |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT | |
4 | UPD444001 |
NEC |
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT | |
5 | UPD444004 |
NEC |
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT | |
6 | UPD444004L |
NEC |
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT | |
7 | UPD444008 |
NEC |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT | |
8 | UPD444008L |
NEC |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT | |
9 | UPD444 |
NEC |
1024 x 4-Bit Static CMOS RAM | |
10 | UPD444-1 |
NEC |
1024 x 4-Bit Static CMOS RAM | |
11 | UPD444-2 |
NEC |
1024 x 4-Bit Static CMOS RAM | |
12 | UPD444-3 |
NEC |
1024 x 4-Bit Static CMOS RAM |