UPD4104-1 - NEC

UPD4104-1 4096 x 1 STATIC NMOS RAM

NEe Microcomputers, Inc. NEe p.PD4104 p.PD41 04·1 pPD41 04·2 4096 x 1 STATIC NMOS RAM DEseR IPTION The J.LPD4104 is a high performance 4K static RAM. Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve high speed and low power in the same device. Utilizing NMOS technology, the J.LPD4104 is f.

Features

' . FastAccessTime-200ns (J.LPD4104-2)
• Very Low Stand-By Power - 28 mW Max.
• Low VCC Data Retention Mode to +3 Volts.
• Single +5V ±10% Supply.
• Fully TTL Compatible.
• Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages.
• '3 Performance Ranges: II jlPD4104 jlPD4104-1 jlPD4104-2 ACCESS TIME 300 ns 250 ns 200 ns RIWCYCLE 4S0 ns .386 ~s 310 ns SU PPL Y CURRENT ACTIVE STANDBY LOWVCC 21 mA 5mA 5mA 21 mA 6mA 3.3mA 25mA 6mA 3.3mA A3 A2 A1 AO A" AlO DOUT WE VSS VCC A5 A4 A7 AS Ag AS DIN CE PIN NAMES AO-A11 CE Addres.