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The µPA1478 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES • Surge Absorber (Zener Diode) built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. ORDE.
• Surge Absorber (Zener Diode) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard
10
1.4
0.6 ±0.1
2.54
1.4 0.5 ±0.1
µPA1478H
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 1 4 5 6 7 8 10 9
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Emitter to B.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPA1476 |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY |
|
| 2 | UPA1428A |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY |
|
| 3 | UPA1428H |
NEC |
NPN silicon epitaxial power transistor array |
|
| 4 | UPA1434 |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY |
|
| 5 | UPA1436A |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY |
|
| 6 | UPA1437 |
NEC |
PNP SILICON POWER TRANSISTOR ARRAY |
|
| 7 | UPA1437H |
NEC |
PNP SILICON POWER TRANSISTOR ARRAY |
|
| 8 | UPA1438H |
NEC |
NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING |
|
| 9 | UPA1452H |
NEC |
NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING |
|
| 10 | UPA1453 |
NEC |
PNP SILICON POWER TRANSISTOR ARRAY |
|
| 11 | UPA1454 |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE |
|
| 12 | UPA1456 |
NEC |
NPN SILICON POWER TRANSISTOR ARRAY |
|