UP01213 - Panasonic Semiconductor

UP01213 Silicon NPN epitaxial planar type

www.DataSheet4U.com Composite Transistors UP01213 Silicon NPN epitaxial planar type 5 Unit: mm (0.30) 4 1.20±0.05 1.60±0.05 0.20 –0.02 +0.05 0.10±0.02 For digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50) (0.50) 1.00±.

Features

• Two elements incorporated into one package (Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead (0.20) 5˚
• UNR1213 × 2
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 −55 to +125 Unit V V mA mW °C °C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) 0 to 0.02 4: Collector (Tr2) 5.