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The ASI UHBS30-1 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° C B 2XØ.130 4X .025 R .115 .430 D E .125 G H I L F FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W O O DIM A B C D E F G H I J K L MINIMUM inches / mm .
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W
O O
DIM A B C D E F G H I J K L MINIMUM
inches / mm
J K
MAXIMUM
inches / mm
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
ORDER CODE: ASI10670
CHARACTERISTICS
SYMBOL
BVCEO B.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UHBS30-2 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 2 | UHBS15-1 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 3 | UHBS15-2 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 4 | UHBS60-1 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 5 | UHBS60-2 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 6 | UHB10FT |
Vishay Siliconix |
Ultrafast Recovery Rectifier |
|
| 7 | UHB20FCT |
Vishay Siliconix |
Dual Common-Cathode Ultrafast Recovery Rectifier |
|
| 8 | UHBM45 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 9 | UH10FT |
Vishay Siliconix |
Ultrafast Recovery Rectifier |
|
| 10 | UH10JT |
Vishay Siliconix |
High Voltage Ultrafast Rectifier |
|
| 11 | UH10K |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 12 | UH11K |
Unisonic Technologies |
NPN EPITAXIAL SILICON TRANSISTOR |
|