UGF27025 - CREE

UGF27025 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF27025 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation. • • • • • • • • • ALL GOLD metal system for highest reliability Industry standard p.

Features

cations subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage o Total Device Dissipation @ Tcase = 70 C o Derate above 70 C Storage Temperature Range Maximum Operating Junction Temperature Symbol VDSS VGSS PD Tstg TJ Value 65 +15 to -0.5 83.5 0.48 -65 to +150 200 Unit Volts Volts Watts o W/ C o C o C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol ΘJC Typical 2.1 Unit o C/W Electrical DC Characteristics (Tc=25°C unless otherwise specif.