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UGF18060 - CREE

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UGF18060 Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability .

Features

ol VDSS VGSS PD Tstg TJ Value 65 +15 to
  –0.5 65 0.83 -65 to +150 200 Unit Volts Volts Watts W/oC oC oC Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol ΘJC Typical - Unit oC/W Electrical DC Characteristics (TC =25°C unless otherwise specified) Rating Symbol Min Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=900mA) Drain to Source On Voltage (VGS=10V, ID=2A) Forward Transconductan.

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