UFZVFH39B Zener Diode PD 500 mW ●Feature High reliability Small mold type (AEC-Q101 qualified) Data sheet ●Outline ●Inner Circuit ●Application Voltage regulation ●Structure Silicon Epitaxial Planar ●Absolute Maximum Rating (Ta = 25℃) Parameter Symbol Power dissipation* PD Junction temperature Tj Storage temperature T.
UFZV 3.6B 3.580 3.836 20 60 20 10.0 1.0 UFZV 3.9B 3.870 4.151 20 50 20 5.0 1.0 UFZV 4.3B 4.151 4.423 20 40 20 5.0 1.0 UFZV 4.7B 4.534 4.795 20 25 20 5.0 1.0 UFZV 5.1B 4.940 5.200 20 20 20 5.0 1.5 UFZV 5.6B 5.450 5.730 20 13 20 5.0 2.5 UFZV 6.2B 5.976 6.307 20 10 20 5.0 3.0 UFZV 6.8B 6.525 6.865 20 8 20 2.0 3.5 UFZV 7.5B 7.104 7.509 20 8 20 0.5 4.0 UFZV 8.2B 7.827 8.265 20 8 20 0.5 5.0 UFZV 9.1B 8.635 9.106 20 8 20 0.5 6.0 UFZV 10B 9.497 10.050 20 8 20 0.2 7.0 UFZV 11B 10.550 11.160 10 10 10 0.2 8.0 UFZV 12B 11.510 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UFZ24N |
UNISONIC TECHNOLOGIES |
28A 60V N-CHANNEL POWER MOSFET | |
2 | UFZ24N-F |
UTC |
N-CHANNEL MOSFET | |
3 | UFZ34 |
UNISONIC TECHNOLOGIES |
N-CHANNEL POWER MOSFET | |
4 | UFZ44 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | UF-1006 |
ETC |
UF1006 | |
6 | UF05N25 |
UTC |
N-CHANNEL MOSFET | |
7 | UF07A |
Sunmate |
SUFACE MOUNT HIGH EFFICIENCY RECTIFIER | |
8 | UF07A |
MDD |
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER | |
9 | UF07A |
Vishay |
HIGH EFFICIENCY RECTIFIERS | |
10 | UF07A |
Galaxy Semi-Conductor |
HIGH EFFICIENCY RECTIFIERS | |
11 | UF07B |
Sunmate |
SUFACE MOUNT HIGH EFFICIENCY RECTIFIER | |
12 | UF07B |
MDD |
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |